Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• Gaussian cross section will lead to pattern infidelity in subsequent pattern transfer into the underlying substrate. The aim of this work is to use FEBIE to modify the sidewalls of as-deposited FEBID lines in order to obtain vertical sidewalls. The paper is organised as follows. First, the idea is

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• fabrication, stencil lithography employs a separate mask that is later aligned on the substrate and retains its aperture after the pattern transfer. This technique has advantages including simplicity in process, reusable masks, and the absence of resist masks. The latter eliminates common challenges

Gap-directed chemical lift-off lithographic nanoarchitectonics for arbitrary sub-micrometer patterning

• Chang-Ming Wang,
• Hong-Sheng Chan,
• Chia-Li Liao,
• Che-Wei Chang and
• Wei-Ssu Liao

Beilstein J. Nanotechnol. 2023, 14, 34–44, doi:10.3762/bjnano.14.4

• modulating stamp properties for micrometer-scale features [27]. utilizing different assembled and backfilled species [28][29]. and further substrate processing, e.g., pattern transfer to the underlying material layer [30][31][32][33][34][35][36]. In practice, CLL allows simple and facile fabrication of

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• , nanomaterials and nano-electro-mechanical systems. Until now, the leading method for scaled-up fabrication of nanostructures has been optical lithography, combined with pattern transfer techniques including plasma etching. Despite its success, optical lithography is reaching its resolution limits and new

• lithography are the leading top-down methods. In this review we focus on another top-down generic technology, namely nanostructuring by charged particle beams used to expose a resist, which can be used as a mask for pattern transfer etching and metal deposition etc. Nanolithography using charged particle

• SNM project has explored the use of a number of new resists chosen for their superior performance in plasma etch pattern transfer applications. These were required since HSQ has poor etch resistance in its as-developed state and it is necessary to process it further using an electron post-development

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al₂O₃ and its application in imprinting lithography

• Hyojeong Kim,
• Kristin Arbutina,
• Anqin Xu and
• Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

• resistive to UV/O3 oxidation. The ALD-coated DNA templates were used for a direct pattern transfer to poly(L-lactic acid) films. Keywords: aluminium oxide (Al2O3); atomic layer deposition; DNA nanostructure; nanofabrication; nanoimprint lithography; pattern transfer; polymer stamp; replica molding

• Al2O3 onto the nanostructures followed by thermal annealing [36]. In addition to the 2D pattern transfer processes, gold nanoparticles with specified 3D shapes were synthesized by growing seed particles in the internal cavities of 3D DNA nanostructures [37][38]. Compared to the above developments, there

• . The average height and width of the DNA bundles were 90.53 ± 3.08 nm and 878.84 ± 22.79 nm, respectively. Taking one step further in this direction, we have recently used DNA nanostructures as master templates for a direct pattern transfer to polymers with high diversity, complexity, and fidelity [46

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

• Sun-Kyu Lee,
• Sori Hwang,
• Yoon-Kee Kim and
• Yong-Jun Oh

Beilstein J. Nanotechnol. 2017, 8, 1049–1055, doi:10.3762/bjnano.8.106

• noble metal nanoparticles on glass substrates via nanoimprinting and dewetting of metallic thin films. Glass templates were made via pattern transfer from a topographic Si mold to an inorganically cross-linked sol–gel (IGSG) resist on glass using a two-layer polydimethylsiloxane (PDMS) stamp followed by

Relationships between chemical structure, mechanical properties and materials processing in nanopatterned organosilicate fins

• Gheorghe Stan,
• Richard S. Gates,
• Qichi Hu,
• Kevin Kjoller,
• Craig Prater,
• Kanwal Jit Singh,
• Ebony Mays and
• Sean W. King

Beilstein J. Nanotechnol. 2017, 8, 863–871, doi:10.3762/bjnano.8.88

• in the elastic modulus of 37% for the 90 nm fins and 15% for the 500 nm fins with respect to the elastic moduli of the samples after pattern transfer (curves i in Figure 4c,d; in these calculations the fins were considered as homogeneous structures). This observation is fully consistent with the AFM

• nanoporous organosilicate dielectrics in a similar fashion as observed previously by the pattern transfer process [31][52][53]. This is clearly shown in Figure 4a (curve iii) where the additional metallization processing also resulted in a decrease in SiC–H3 absorbance detected by AFM-IR from the 20 nm wide

• removal of terminal CH3 groups. More importantly, CR-AFM measurements performed on the nanoporous organosilicate fins showed an increase in contact resonance frequency almost back to the values observed after the pattern transfer process (curves iii in Figure 4c,d), with an increase of about 25% for the

Scalable, high performance, enzymatic cathodes based on nanoimprint lithography

• Dmitry Pankratov,
• Richard Sundberg,
• Javier Sotres,
• Dmitry B. Suyatin,
• Ivan Maximov,
• Sergey Shleev and
• Lars Montelius

Beilstein J. Nanotechnol. 2015, 6, 1377–1384, doi:10.3762/bjnano.6.142

• application of NIL for amperometric bioelectronics. NIL is a parallel patterning technique capable of rendering features as small as 2–3 nm (or even smaller) in a fast, reproducible, scalable and economical way [17]. Nanoimprinting is based on the pattern transfer by a replication technique where nanometer

• -interference lithography. The stamp had undergone an anti-sticking treatment, resulting in a thin monolayer, self-assembling film of fluorinated alkyl phosphoric acid derivatives, as described in [27]. The pattern transfer step included imprinting using a 6" imprinter machine from Obducat Technologies AB (Lund

Near-field photochemical and radiation-induced chemical fabrication of nanopatterns of a self-assembled silane monolayer

• Ulrich C. Fischer,
• Carsten Hentschel,
• Florian Fontein,
• Linda Stegemann,
• Christiane Hoeppener,
• Harald Fuchs and
• Stefanie Hoeppener

Beilstein J. Nanotechnol. 2014, 5, 1441–1449, doi:10.3762/bjnano.5.156

• nanoparticles, which was performed to increase the topographical contrast for detection by means of AFM. By binding 1.4 nm negatively charged gold nanoparticles to the positively charged APTES SAM nanopattern it could be demonstrated that the pattern transfer was successful even for 0.22 µm masks (Figure 3c

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

• Adrian Iovan,
• Marco Fischer,
• Roberto Lo Conte and
• Vladislav Korenivski

Beilstein J. Nanotechnol. 2012, 3, 884–892, doi:10.3762/bjnano.3.98

• significantly modified during this process, which makes the pattern transfer at the desired 10 nm diameter range essentially impossible. We therefore developed an additional lift-off process step to reinforce the mask. It includes a deposition by e-beam evaporation of an Al metal layer onto the etched particle

• photomask. The top electrode mask has different diameter disks and half-disks in the range of 10–50 µm. The pattern transfer is done by ion milling for 1 h. The etching time was calibrated by using surface profilometry such as to stop the etching at the Al bottom electrode. The sample was then capped with a

• integration into spin-photo-electronic devices. Electron-beam and focused-ion-beam techniques are typically limited to feature sizes of tens of nanometres, if the features are to be well defined, and are rather inefficient for large-area nanopatterning since both methods employ series point-by-point pattern

Substrate-mediated effects in photothermal patterning of alkanethiol self-assembled monolayers with microfocused continuous-wave lasers

• Anja Schröter,
• Mark Kalus and
• Nils Hartmann

Beilstein J. Nanotechnol. 2012, 3, 65–74, doi:10.3762/bjnano.3.8

• ) SAM formation upon immersion in an ethanolic solution of HDT; (b) photothermal laser processing of the HDT SAM at λ = 532 nm; and (c) pattern transfer into the Au film upon etching in an aqueous solution of K2S2O3 and K3Fe(CN)6. Adapted from [11]. UV–vis spectra of Au/glass substrates with Au layer

• laser pulses at P = 24.3 mW and with distinct τ of 50 µs (left) and 100 µs (right). Pattern transfer to the Au layer was carried out by wet-chemical etching. Diameters refer to values at half-depth. Dependence of the structure diameter d on the incident laser power P and the pulse length τ of HDT-SAMs